Datasheet > IS42VM32800D-10TLI-TR

IS42VM32800D-10TLI-TR

更新时间： 2024-11-14 10:32:19

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器光电二极管
页数	文件大小	规格书
23页	502K
描述
Synchronous DRAM, 8MX32, 8ns, CMOS, PDSO86

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IS42VM83200D / IS42VM16160D / IS42VM32800D

32Mx8, 16Mx16, 8Mx32

256Mb Mobile Synchronous DRAM

Preliminary Information

AUGUST 2010

DESCRIPTION

FEATURES

ISSI's 256Mb Mobile Synchronous DRAM achieves high-

speed data transfer using pipeline architecture. All input

and output signals refer to the rising edge of the clock

input. Both write and read accesses to the SDRAM are

burst oriented. The 256Mb Mobile Synchronous DRAM

is designed to minimize current consumption making it

ideal for low-power applications. Both TSOP and BGA

packages are offered, including industrial grade products.

•ꢀ Fully synchronous; all signals referenced to a

positive clock edge

•ꢀ Internal bank for hiding row access and pre-

charge

•ꢀ Programmable CAS latency: 2, 3

•ꢀ Programmable Burst Length: 1, 2, 4, 8, and Full

Page

•ꢀ Programmable Burst Sequence:

•ꢀ Sequential and Interleave

•ꢀ Auto Refresh (CBR)

KEY TIMING PARAMETERS

-8⁽¹⁾

-10⁽²⁾

Unit

•ꢀ TCSR (Temperature Compensated Self Refresh)

Parameter

•ꢀ PASR (Partial Arrays Self Refresh): 1/16, 1/8,

CLK Cycle Time

CAS Latency = 3

CAS Latency = 2

CLK Frequency

CAS Latency = 3

CAS Latency = 2

Access Time from CLK

CAS Latency = 3

CAS Latency = 2

1/4, 1/2, and Full

•ꢀ Deep Power Down Mode (DPD)

•ꢀ Driver Strength Control (DS): 1/4, 1/2, and Full

125

100

Mhz

OPTIONS

•ꢀ Conﬁgurations:

- 32M x 8

- 16M x 16

- 8M x 32

•ꢀ Power Supply

IS42VMxxx – V^{d d}/Vd d q = 1.8V

•ꢀ Packages:

Notes:

1. Available for x8/x16 only

2. Available for x32 only

x8 / x16 –TSOP II (54), BGA (54) [x16 only]

x32 – TSOP II (86), BGA (90)

•ꢀ Temperature Range:

Commercial (0°C to +70°C)

Industrial (–40 ºC to 85 ºC)

ADDRESSING TABLE

Parameter

32M x 8

16M x 16

8M x 32

Conﬁguration

8M x 8 x 4 banks

8K/64ms

A0-A12

4M x 16 x 4 banks

8K/64ms

A0-A12

2M x 32 x 4 banks

4K/64ms

A0-A11

Refresh Count

Row Addressing

Column Addressing

Bank Addressing

Precharge Addressing

A0-A9

A0-A8

BA0, BA1

A10

BA0, BA1

A10

BA0, BA1

A10

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be

expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated

Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. - www.issi.com

Rev. 00D

08/06/2010

12 3 4 5 6 7...23

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与IS42VM32800D-10TLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS42VM32800D-75BLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207,
IS42VM32800D-75TL	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42VM32800D-75TLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42VM32800E-6BLI	ISSI	获取价格	IC DRAM 256M PARALLEL 90TFBGA
IS42VM32800E-6BLI-TR	ISSI	获取价格	IC DRAM 256M PARALLEL 90TFBGA
IS42VM32800E-75BLI	ISSI	获取价格	IC DRAM 256M PARALLEL 90TFBGA
IS42VM32800E-75BLI-TR	ISSI	获取价格	IC DRAM 256M PARALLEL 90TFBGA
IS42VM32800K-6BLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, FBGA-90
IS42VM32800K-6BLI-TR	ISSI	获取价格	IC DRAM 256M PARALLEL 90TFBGA
IS42VM32800K-75BLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90

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