Datasheet > IS42VM32800K-6BLI-TR

IS42VM32800K-6BLI-TR

更新时间： 2024-11-13 22:59:27

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
35页	913K
描述
IC DRAM 256M PARALLEL 90TFBGA

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IS42/45SM/RM/VM32800K

2M x 32Bits x 4Banks Mobile Synchronous DRAM

Description

These IS42/45SM/RM/VM32800K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32

bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input

and output voltage levels are compatible with LVCMOS.

Features

. JEDEC standard 3.3V, 2.5V, 1.8V power supply.

• Auto refresh and self refresh.

• All inputs and outputs referenced to the positive edge of the

system clock.

• All pins are compatible with LVCMOS interface.

• 4K refresh cycle every 16ms (A2 grade) or

64 ms (Industrial, A1 grade).

• Data mask function by DQM.

• Internal 4 banks operation.

• Burst Read Single Write operation.

• Special Function Support.

• Programmable Burst Length and Burst Type.

- 1, 2, 4, 8 or Full Page for Sequential Burst.

- 4 or 8 for Interleave Burst.

- PASR(Partial Array Self Refresh)

- Auto TCSR(Temperature Compensated Self Refresh)

- Programmable Driver Strength Control

• Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength

- Deep Power Down Mode

• Programmable CAS Latency : 2, 3 clocks.

• Automatic precharge, includes CONCURRENT Auto Precharge

Mode and controlled Precharge.

products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

www.issi.com - DRAM@issi.com

Rev. B1 | Jan. 2016

12 3 4 5 6 7...35

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IS42VM32800K-6BLI-TR 替代型号

型号	品牌	替代类型	描述	数据表
IS42VM32800E-6BLI-TR	ISSI	功能相似	IC DRAM 256M PARALLEL 90TFBGA

与IS42VM32800K-6BLI-TR相关器件

型号	品牌	获取价格	描述	数据表
IS42VM32800K-75BLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, FBGA-90
IS42VM81600E	ISSI	获取价格	128Mb Mobile Synchronous DRAM
IS42VM81600E-7TLI	ISSI	获取价格	Synchronous DRAM, 16MX8, 8ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54
IS42VM83200D	ISSI	获取价格	Sequential and Interleave
IS42VM83200D-8TLI	ISSI	获取价格	Synchronous DRAM, 32MX8, 6ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54
IS42VM83200D-8TLI-TR	ISSI	获取价格	Synchronous DRAM, 32MX8, 6ns, CMOS, PDSO54,
IS42VS16100C1	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10T	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TI	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1-10TL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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