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IS42VM81600E-7TLI

更新时间： 2024-11-14 05:56:11
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器光电二极管
页数 文件大小 规格书
24页 428K
描述
Synchronous DRAM, 16MX8, 8ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54

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IS42VM81600E-7TLI 数据手册

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IS42VM81600E / IS42VM16800E / IS42VM32400E  
16Mx8, 8Mx16, 4Mx32  
128Mb Mobile Synchronous DRAM  
Advanced Information  
FEBRUARY 2009  
DESCRIPTION  
FEATURES  
ISSI's 128Mb Mobile Synchronous DRAM achieves high-  
speed data transfer using pipeline architecture. All input  
and output signals refer to the rising edge of the clock  
input. Both write and read accesses to the SDRAM are  
burst oriented. The 128Mb Mobile Synchronous DRAM  
is designed to minimize current consumption making it  
ideal for low-power applications. Both TSOP and BGA  
packages are offered, including industrial grade products.  
•ꢀ Fully synchronous; all signals referenced to a  
positive clock edge  
•ꢀ Internal bank for hiding row access and pre-  
charge  
•ꢀ Programmable CAS latency: 2, 3  
•ꢀ Programmable Burst Length: 1, 2, 4, 8, and Full  
Page  
•ꢀ Programmable Burst Sequence:  
•ꢀ Sequential and Interleave  
•ꢀ Auto Refresh (CBR)  
KEY TIMING PARAMETERS  
Parameter  
-71  
-752  
-10  
Unit  
•ꢀ TCSR (Temperature Compensated Self Refresh)  
CLK Cycle Time  
CAS Latency = 3  
CAS Latency = 2  
CLK Frequency  
CAS Latency = 3  
CAS Latency = 2  
Access Time from CLK  
CAS Latency = 3  
CAS Latency = 2  
•ꢀ PASR (Partial Arrays Self Refresh): 1/16, 1/8,  
1/4, 1/2, and Full  
•ꢀ Deep Power Down Mode (DPD)  
7.0  
9.6  
7.5  
9.6  
10  
12  
ns  
ns  
•ꢀ Driver Strength Control (DS): 1/4, 1/2, and Full  
143  
104  
133  
104  
100  
83  
Mhz  
Mhz  
OPTIONS  
•ꢀ Configurations:  
- 16M x 8  
5.4  
8.0  
5.4  
8.0  
8.0  
9.0  
ns  
ns  
- 8M x 16  
- 4M x 32  
•ꢀ Power Supply  
IS42VMxxx – Vd d /Vd d q = 1.8 V  
•ꢀ Packages:  
Note:  
1. Available for x8 / x16 only  
2. Available for x32 only  
x8 / x16 –TSOP II (54), BGA (54) [x16 only]  
x32 – TSOP II (86), BGA (90)  
•ꢀ Temperature Range:  
Commercial (0°C to +70°C)  
Industrial (–40 ºC to 85 ºC)  
•ꢀ Die Revision: E  
ADDRESSING TABLE  
Parameter  
16M x 8  
4M x 8 x 4 banks  
4K/64ms  
A0-A11  
8M x 16  
4M x 32  
Configuration  
2M x 16 x 4 banks  
4K/64ms  
A0-A11  
1M x 32 x 4 banks  
4K/64ms  
A0-A11  
Refresh Count  
Row Addressing  
Column Addressing  
Bank Addressing  
Precharge Addressing  
A0-A9  
A0-A8  
A0-A7  
BA0, BA1  
A10  
BA0, BA1  
A10  
BA0, BA1  
A10  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-  
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain  
the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. - www.issi.com  
Rev. 00B  
1
01/22/09  
1234567...24

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IS42VS16100C1-10TI ISSI

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IS42VS16100C1-10TLI ISSI

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IS42VS16100D-10TL ISSI

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