Datasheet > IS42VM32800D

IS42VM32800D

更新时间： 2024-11-14 01:15:07

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
23页	490K
描述
Sequential and Interleave

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中文翻译

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数据手册

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IS42VM32800D 数据手册

IS42VM83200D / IS42VM16160D / IS42VM32800D

32Mx8, 16Mx16, 8Mx32

256Mb Mobile Synchronous DRAM

APRIL 2012

DESCRIPTION

FEATURES

ISSI'sꢀ256MbꢀMobileꢀSynchronousꢀDRAMꢀachievesꢀhigh-

speedꢀdataꢀtransferꢀusingꢀpipelineꢀarchitecture.ꢀAllꢀinputꢀ

andꢀoutputꢀsignalsꢀreferꢀtoꢀtheꢀrisingꢀedgeꢀofꢀtheꢀclockꢀ

input.ꢀBothꢀwriteꢀandꢀreadꢀaccessesꢀtoꢀtheꢀSDRAMꢀareꢀ

burstꢀoriented.ꢀTheꢀ256MbꢀMobileꢀSynchronousꢀDRAMꢀ

isꢀdesignedꢀtoꢀminimizeꢀcurrentꢀconsumptionꢀmakingꢀitꢀ

idealꢀforꢀlow-powerꢀapplications.ꢀꢀꢀBothꢀTSOPꢀandꢀBGAꢀ

packagesꢀareꢀoffered,ꢀincludingꢀindustrialꢀgradeꢀproducts.

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positiveꢀclockꢀedge

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccessꢀandꢀpre-

charge

•ꢀ ProgrammableꢀCASꢀlatency:ꢀ2,ꢀ3

•ꢀ ProgrammableꢀBurstꢀLength:ꢀ1,ꢀ2,ꢀ4,ꢀ8,ꢀandꢀFullꢀ

Page

•ꢀ ProgrammableꢀBurstꢀSequence:

•ꢀ SequentialꢀandꢀInterleave

KEY TIMING PARAMETERS

•ꢀ AutoꢀRefreshꢀ(CBR)

-8⁽¹⁾

-12⁽²⁾

Unit

•ꢀ TCSRꢀ(TemperatureꢀCompensatedꢀSelfꢀRefresh)ꢀ

Parameter

•ꢀ PASRꢀ(PartialꢀArraysꢀSelfꢀRefresh):ꢀ1/16,ꢀ1/8,ꢀ

1/4,ꢀ1/2,ꢀandꢀFull

•ꢀ DeepꢀPowerꢀDownꢀModeꢀ(DPD)

CLKꢀCycleꢀTime

CAS Latencyꢀ=ꢀ3

CAS Latencyꢀ=ꢀ2

CLKꢀFrequency

CASꢀLatencyꢀ=ꢀ3

CASꢀLatencyꢀ=ꢀ2

AccessꢀTimeꢀfromꢀCLK

CASꢀLatencyꢀ=ꢀ3

CASꢀLatencyꢀ=ꢀ2

•ꢀ DriverꢀStrengthꢀControlꢀ(DS):ꢀ1/4,ꢀ1/2,ꢀandꢀFull

125

100

Mhz

OPTIONS

•ꢀ Conﬁgurations:ꢀ

–ꢀ32Mꢀxꢀ8ꢀꢀ

–ꢀ16Mꢀxꢀ16ꢀ

–ꢀ8Mꢀxꢀ32ꢀꢀ

•ꢀ PowerꢀSupplyꢀꢀ

IS42VMxxxꢀ–ꢀV^dd/Vddqꢀ=ꢀ1.8Vꢀꢀ

•ꢀ Packages:ꢀ

Notes:

1.ꢀ Availableꢀforꢀx8/x16ꢀonly

2.ꢀꢀAvailableꢀforꢀx32ꢀonly

x8ꢀ–TSOPꢀIIꢀ(54)ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

x16ꢀ–TSOPꢀIIꢀ(54),ꢀBGAꢀ(54)ꢀꢀ

x32ꢀ–ꢀTSOPꢀIIꢀ(86),ꢀꢀBGAꢀ(90)

•ꢀ TemperatureꢀRange:ꢀꢀ

Commercialꢀ(0°Cꢀtoꢀ+70°C)ꢀꢀ

Industrialꢀ(–40ꢀºCꢀtoꢀ85ꢀºC)

ADDRESSING TABLE

Parameter

32M x 8

16M x 16

8M x 32

Conﬁguration

8Mꢀxꢀ8ꢀxꢀ4ꢀbanks

8K/64ms

A0-A12

4Mꢀxꢀ16ꢀxꢀ4ꢀbanks

8K/64ms

A0-A12

2Mꢀxꢀ32ꢀxꢀ4ꢀbanks

4K/64ms

A0-A11

RefreshꢀCount

RowꢀꢀAddressing

ColumnꢀAddressing

BankꢀAddressing

PrechargeꢀAddressing

A0-A9

A0-A8

BA0,ꢀBA1

A10

BA0,ꢀBA1

A10

BA0,ꢀBA1

A10

outꢀnotice.ꢀꢀꢀISSIꢀassumesꢀnoꢀliabilityꢀarisingꢀoutꢀofꢀtheꢀapplicationꢀorꢀuseꢀofꢀanyꢀinformation,ꢀproductsꢀorꢀservicesꢀdescribedꢀherein.ꢀCustomersꢀareꢀadvisedꢀtoꢀobtainꢀ

theꢀlatestꢀversionꢀofꢀthisꢀdeviceꢀspeciﬁcationꢀbeforeꢀrelyingꢀonꢀanyꢀpublishedꢀinformationꢀandꢀbeforeꢀplacingꢀordersꢀforꢀproducts.ꢀꢀ

IntegratedꢀSiliconꢀSolution,ꢀInc.ꢀdoesꢀnotꢀrecommendꢀtheꢀuseꢀofꢀanyꢀofꢀitsꢀproductsꢀinꢀlifeꢀsupportꢀapplicationsꢀwhereꢀtheꢀfailureꢀorꢀmalfunctionꢀofꢀtheꢀproductꢀcanꢀreasonablyꢀbeꢀ

expectedꢀtoꢀcauseꢀfailureꢀofꢀtheꢀlifeꢀsupportꢀsystemꢀorꢀtoꢀsigniﬁcantlyꢀaffectꢀitsꢀsafetyꢀorꢀeffectiveness.ꢀProductsꢀareꢀnotꢀauthorizedꢀforꢀuseꢀinꢀsuchꢀapplicationsꢀunlessꢀIntegratedꢀ

SiliconꢀSolution,ꢀInc.ꢀreceivesꢀwrittenꢀassuranceꢀtoꢀitsꢀsatisfaction,ꢀthat:

a.)ꢀtheꢀriskꢀofꢀinjuryꢀorꢀdamageꢀhasꢀbeenꢀminimized;

b.)ꢀtheꢀuserꢀassumeꢀallꢀsuchꢀrisks;ꢀand

c.)ꢀpotentialꢀliabilityꢀofꢀIntegratedꢀSiliconꢀSolution,ꢀIncꢀisꢀadequatelyꢀprotectedꢀunderꢀtheꢀcircumstances

Integrated Silicon Solution, Inc. - www.issi.comꢀ

Rev. A

04/11/2012

12 3 4 5 6 7...23

中文翻译

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与IS42VM32800D相关器件

型号	品牌	获取价格	描述	数据表
IS42VM32800D-10BL	ISSI	获取价格	Synchronous DRAM, 8MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, B
IS42VM32800D-10BLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 8ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207, B
IS42VM32800D-10BLI-TR	ISSI	获取价格	Synchronous DRAM, 8MX32, 8ns, CMOS, PBGA90
IS42VM32800D-10BL-TR	ISSI	获取价格	Synchronous DRAM, 8MX32, 8ns, CMOS, PBGA90
IS42VM32800D-10TL	ISSI	获取价格	Synchronous DRAM, 8MX32, 8ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42VM32800D-10TLI-TR	ISSI	获取价格	Synchronous DRAM, 8MX32, 8ns, CMOS, PDSO86
IS42VM32800D-75BLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MO-207,
IS42VM32800D-75TL	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42VM32800D-75TLI	ISSI	获取价格	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOP2-86
IS42VM32800E-6BLI	ISSI	获取价格	IC DRAM 256M PARALLEL 90TFBGA

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