Datasheet > IS42S16320D

IS42S16320D

更新时间： 2024-11-25 01:15:07

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
66页	1573K
描述
Internal bank for hiding row access/precharge

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IS42S16320D 数据手册

IS42/45R86400D/16320D/32160D

IS42/45S86400D/16320D/32160D

16Mx32, 32Mx16, 64Mx8

SEPTEMBER 2012

512Mb SDRAM

DEVICE OVERVIEW

ISSI's 512Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

FEATURES

•ꢀ Clock frequency: 200, 166, 143 MHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

PACKAGE INFORMATION

IS42/45S32160D IS42/45S16320D IS42/45S86400D

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ Powerꢀsupply:ꢀVdd/Vddq = 2.3V-3.6V

ꢀ IS42/45SxxxxxDꢀ-ꢀVdd/Vddq = 3.3Vꢀ

ꢀ IS42/45RxxxxxDꢀ-ꢀVdd/Vddq = 2.5

•ꢀ LVTTLꢀinterface

IS42/45R32160D IS42/45R16320D IS42/45R86400D

4M x 32 x 4

banks

8M x 16 x 4

banks

16M x 8 x 4

banks

90-ballꢀTF-BGA

54-pinꢀTSOP-II

54-ballꢀTF-BGA

54-pinꢀTSOP-II

•ꢀ Programmableꢀburstꢀlengthꢀ

– (1, 2, 4, 8, full page)

KEY TIMING PARAMETERS

•ꢀ Programmableꢀburstꢀsequence:ꢀ

Sequential/Interleave

Parameter

-5

-6

-7

Unit

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)

ClkꢀCycleꢀTimeꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

5ꢀ

10ꢀ

ꢀ

6ꢀ

10ꢀ

ꢀ

7ꢀ

7.5ꢀ

ꢀ

nsꢀ

ClkꢀFrequencyꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

200ꢀ

100ꢀ

ꢀ

167ꢀ

100ꢀ

143ꢀ

133ꢀ

Mhzꢀ

Mhz

AccessꢀTimeꢀꢀfromꢀClockꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

5.0ꢀ

6ꢀ

5.4ꢀ

6ꢀ

5.4ꢀ

5.4

nsꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

ADDRESS TABLE

•ꢀ Packages:ꢀ

x8/x16:ꢀ54-pinꢀTSOP-II,ꢀ54-ballꢀTF-BGAꢀ(x16ꢀonly)

x32:ꢀ90-ballꢀTF-BGA

Parameter

16M x 32

32M x 16

64M x 8

16M x 8 x 4

banks

Conﬁguration 4M x 32 x 4

8M x 16 x 4

banks

BankꢀAddressꢀ BA0,ꢀBA1

Pins

•ꢀ TemperatureꢀRange:

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

Automotive, A1 (-40^oC to +85^oC)

BA0,ꢀBA1

Autoprecharge A10/AP

Pins

A10/AP

Automotive, A2 (-40^oC to +105^oC)

Row Address 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)

Column

512(A0 – A8) 1K(A0ꢀ–ꢀA9)

2K(A0ꢀ–ꢀA9,ꢀ

Address

A11)

Refresh Count

Com./Ind./A1 8Kꢀ/ꢀ64ms

A2 8Kꢀ/ꢀ16ms

8Kꢀ/ꢀ64ms

8Kꢀ/ꢀ16ms

8Kꢀ/ꢀ64ms

8Kꢀ/ꢀ16ms

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. A

08/29/2012

12 3 4 5 6 7...66

中文翻译

下载PDF

与IS42S16320D相关器件

型号	品牌	获取价格	描述	数据表
IS42S16320D-7BLI	ISSI	获取价格	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-2
IS42S16320D-7BLI-TR	ISSI	获取价格	Cache DRAM Module, 32MX16, 5.4ns, CMOS, PBGA54, 8 X 13 MM, 0.80 MMM, PITCH, LEAD FREE, MO-
IS42S16320D-7TL	ISSI	获取价格	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSSOP2, 54 PIN
IS42S16320D-7TL-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 54TSOP
IS42S16320F	ISSI	获取价格	8K refresh cycles every 64 ms
IS42S16320F-6BL	ISSI	获取价格	IC DRAM 512M PARALLEL 54TFBGA
IS42S16320F-6BLI	ISSI	获取价格	IC DRAM 512M PARALLEL 54TFBGA
IS42S16320F-6BLI-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 54TFBGA
IS42S16320F-6BL-TR	ISSI	获取价格	IC DRAM 512M PARALLEL 54TFBGA
IS42S16320F-6TL	ISSI	获取价格	IC DRAM 512M PARALLEL 54TSOP

与IS42S16320D相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42S16320D

IS42S16320D 数据手册

与IS42S16320D相关器件

与IS42S16320D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IS42S16320D

IS42S16320D 数据手册

与IS42S16320D相关器件

与IS42S16320D相关文章

您还可以找

您在本页遇到什么问题？