Datasheet > IS42R16320F-6TL

IS42R16320F-6TL

更新时间： 2024-01-27 12:29:19

品牌	Logo	应用领域
美国芯成 - ISSI		时钟动态存储器光电二极管内存集成电路
页数	文件大小	规格书
63页	1263K
描述
Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP2-54

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技术参数
数据手册

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IS42R16320F-6TL 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	TSOP2, TSOP54,.46,32	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.28
风险等级：	5.66	访问模式：	FOUR BANK PAGE BURST
最长访问时间：	5.4 ns	其他特性：	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
最大时钟频率 (fCLK)：	166 MHz	I/O 类型：	COMMON
交错的突发长度：	1,2,4,8	JESD-30 代码：	R-PDSO-G54
长度：	22.22 mm	内存密度：	536870912 bit
内存集成电路类型：	SYNCHRONOUS DRAM	内存宽度：	16
功能数量：	1	端口数量：	1
端子数量：	54	字数：	33554432 words
字数代码：	32000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	32MX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOP2
封装等效代码：	TSOP54,.46,32	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	电源：	2.5 V
认证状态：	Not Qualified	刷新周期：	8192
座面最大高度：	1.2 mm	自我刷新：	YES
连续突发长度：	1,2,4,8,FP	最大待机电流：	0.004 A
子类别：	DRAMs	最大压摆率：	0.18 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.8 mm
端子位置：	DUAL	宽度：	10.16 mm
Base Number Matches：	1

IS42R16320F-6TL 数据手册

IS42R86400F/16320F, IS45R86400F/16320F

IS42S86400F/16320F, IS45S86400F/16320F

32Mx16, 64Mx8

512Mb SDRAM

NOVEMBER 2015

DEVIcE OVERVIEW

ISSI's 512Mb Synchronous DRAM achieves high-speed

data transfer using pipeline architecture. All inputs and

outputs signals refer to the rising edge of the clock input.

Theꢀ512MbꢀSDRAMꢀisꢀorganizedꢀasꢀfollows.ꢀ

FEATURES

•ꢀ Clock frequency: 200, 166, 143 MHz

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

PAcKAGE INFORMATION

•ꢀ Internalꢀbankꢀforꢀhidingꢀrowꢀaccess/precharge

•ꢀ Powerꢀsupply:ꢀV^dd/Vddq = 2.3V-3.6V

ꢀ IS42/45SxxxxxFꢀ-ꢀVdd/Vddq = 3.3Vꢀ

ꢀ IS42/45RxxxxxFꢀ-ꢀV^dd/Vddq = 2.5

•ꢀ LVTTLꢀinterface

IS42/45S16320F

IS42/45S86400F

IS42/45R16320F

IS42/45R86400F

8M x 16 x 4 banks

54-pinꢀTSOP-II

54-ballꢀTF-BGA

16M x 8 x 4 banks

54-pinꢀTSOP-II

•ꢀ Programmableꢀburstꢀlengthꢀ

– (1, 2, 4, 8, full page)

KEY TIMING PARAMETERS

•ꢀ Programmableꢀburstꢀsequence:ꢀ

Sequential/Interleave

Parameter

-5

-6

-7

Unit

•ꢀ AutoꢀRefreshꢀ(CBR)

•ꢀ SelfꢀRefresh

•ꢀ 8Kꢀrefreshꢀcyclesꢀeveryꢀ64ꢀms

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCAS latency (2, 3 clocks)

ClkꢀCycleꢀTimeꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

5ꢀ

10ꢀ

ꢀ

6ꢀ

10ꢀ

ꢀ

7ꢀ

7.5ꢀ

ꢀ

nsꢀ

ClkꢀFrequencyꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀꢀ

200ꢀ

100ꢀ

ꢀ

167ꢀ

100ꢀ

143ꢀ

133ꢀ

Mhzꢀ

Mhz

AccessꢀTimeꢀꢀfromꢀClockꢀ

CASꢀLatencyꢀ=ꢀ3ꢀ

CASꢀLatencyꢀ=ꢀ2ꢀ

ꢀ

5ꢀ

6ꢀ

ꢀ

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

5.4ꢀ

6ꢀ

5.4ꢀ

5.4

nsꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀprechargeꢀ

command

ADDRESS TABLE

•ꢀ Packages:ꢀ

x8/x16:ꢀ54-pinꢀTSOP-II,ꢀ54-ballꢀTF-BGAꢀ(x16ꢀonly)

Parameter

32M x 16

64M x 8

Conﬁguration 8M x 16 x 4

banks

16M x 8 x 4

banks

•ꢀ TemperatureꢀRange:

Commercial (0^oC to +70^oC)

Industrial (-40^oC to +85^oC)

Automotive, A1 (-40^oC to +85^oC)

Bank Address BA0, BA1

Pins/Balls

BA0, BA1

Automotive, A2 (-40^oC to +105^oC)

Autoprecharge A10/AP

Pins/Ball

A10/AP

Row Address 8K(A0ꢀ–ꢀA12) 8K(A0ꢀ–ꢀA12)

Column

1K(A0ꢀ–ꢀA9)

2K(A0ꢀ–ꢀA9,ꢀ

Address

A11)

Refresh Count

Com./Ind./A1 8Kꢀ/ꢀ64ms

A2 8Kꢀ/ꢀ16ms

8Kꢀ/ꢀ64ms

8Kꢀ/ꢀ16ms

out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain

the latest version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for use in such ap-

plications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com

Rev. B

11/13/2015

12 3 4 5 6 7...63

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与IS42R16320F-6TL相关器件

型号	品牌	描述	获取价格	数据表
IS42R16320F-6TLI	ISSI	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54	获取价格
IS42R16320F-7BL	ISSI	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, TFBGA-54	获取价格
IS42R16320F-7BLI	ISSI	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PBGA54, TFBGA-54	获取价格
IS42R16320F-7TL	ISSI	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP2-54	获取价格
IS42R16320F-7TLI	ISSI	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, TSOP2-54	获取价格
IS42R16800E-75BL	ISSI	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFB	获取价格

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