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IS41C82052-50JI PDF预览

IS41C82052-50JI

更新时间: 2024-02-09 03:09:26
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
17页 167K
描述
Fast Page DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

IS41C82052-50JI 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ, SOJ28,.34针数:28
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.92
Is Samacsys:N访问模式:FAST PAGE
最长访问时间:50 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-J28
JESD-609代码:e0长度:18.161 mm
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:8湿度敏感等级:3
功能数量:1端口数量:1
端子数量:28字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ28,.34封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
刷新周期:2048座面最大高度:3.556 mm
自我刷新:NO最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.12 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

IS41C82052-50JI 数据手册

 浏览型号IS41C82052-50JI的Datasheet PDF文件第2页浏览型号IS41C82052-50JI的Datasheet PDF文件第3页浏览型号IS41C82052-50JI的Datasheet PDF文件第4页浏览型号IS41C82052-50JI的Datasheet PDF文件第5页浏览型号IS41C82052-50JI的Datasheet PDF文件第6页浏览型号IS41C82052-50JI的Datasheet PDF文件第7页 
IS41C82052  
IS41LV82052  
2M x 8 (16-MBIT) DYNAMIC RAM  
WITH FAST PAGE MODE  
NOVEMBER 2000  
FEATURES  
DESCRIPTION  
• Fast Page Mode Access Cycle  
TheISSI IS41C82052andIS41LV82052are2,097,152x8-bit  
high-performance CMOS Dynamic Random Access  
Memory. The Fast Page Mode allows 2,048 random  
accesses within a single row with access cycle time as  
short as 20 ns per 4-bit word.  
• TTL compatible inputs and outputs  
• Refresh Interval:  
-- 2,048 cycles/32 ms  
• Refresh Mode: RAS-Only,  
CAS-before-RAS (CBR), and Hidden  
• Single power supply:  
These features make the IS41C82052 and IS41LV82052  
ideally suited for high-bandwidth graphics, digital signal  
processing, high-performance computing systems, and  
peripheral applications.  
5V 10ꢀ or 3.3V 10ꢀ  
• Byte Write and Byte Read operation via two CAS  
TheIS41C82052andIS41LV82052arepackagedin28-pin  
300-mil SOJ and 28-pin TSOP (Type II) with JEDEC  
standard pinouts.  
• Industrial temperature range -40°C to 85°C  
PRODUCT SERIES OVERVIEW  
KEY TIMING PARAMETERS  
Part No.  
Refresh  
2K  
Voltage  
5V 10ꢀ  
3.3V 10ꢀ  
IS41C82052  
IS41LV82052  
Parameter  
-50  
50  
13  
25  
20  
84  
-60  
60  
Unit  
ns  
2K  
RAS Access Time (tRAC)  
CAS Access Time (tCAC)  
ColumnAddressAccessTime(tAA  
15  
ns  
)
30  
ns  
FastPageModeCycleTime(tPC  
)
25  
ns  
PIN CONFIGURATION  
Read/Write Cycle Time (tRC)  
104  
ns  
28 Pin SOJ, TSOP (Type II)  
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
WE  
RAS  
NC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
GND  
2
I/O7  
I/O6  
I/O5  
I/O4  
CAS  
OE  
A9  
3
PIN DESCRIPTIONS  
4
5
A0-A10  
I/O0-7  
WE  
Address Inputs  
6
Data Inputs/Outputs  
Write Enable  
7
8
OE  
Output Enable  
Row Address Strobe  
Column Address Strobe  
Power  
A10  
A0  
9
A8  
10  
11  
12  
13  
14  
A7  
RAS  
CAS  
Vcc  
A1  
A6  
A2  
A5  
A3  
A4  
GND  
NC  
Ground  
VCC  
GND  
No Connection  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. A  
12/19/00  
1

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