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IS41C8512-35TI PDF预览

IS41C8512-35TI

更新时间: 2024-01-14 09:32:34
品牌 Logo 应用领域
矽成 - ICSI 存储动态存储器
页数 文件大小 规格书
18页 201K
描述
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41C8512-35TI 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.83Is Samacsys:N
Base Number Matches:1

IS41C8512-35TI 数据手册

 浏览型号IS41C8512-35TI的Datasheet PDF文件第2页浏览型号IS41C8512-35TI的Datasheet PDF文件第3页浏览型号IS41C8512-35TI的Datasheet PDF文件第4页浏览型号IS41C8512-35TI的Datasheet PDF文件第5页浏览型号IS41C8512-35TI的Datasheet PDF文件第6页浏览型号IS41C8512-35TI的Datasheet PDF文件第7页 
IS41C8512  
IS41LV8512  
512K x 8 (4-MBIT) DYNAMIC RAM  
WITH EDO PAGE MODE  
DESCRIPTION  
ꢀEATURES  
The ICSI IS41C8512 and IS41LV8512 is a 524,288 x 8-bit  
high-performanceCMOS DynamicRandomAccessMemories.  
The IS41C8512 offer an accelerated cycle access called EDO  
Page Mode. EDO Page Mode allows 512 random accesses  
within a single row with access cycle time as short as 10 ns per  
8-bit.  
• Extended Data-Out (EDO) Page Mode access cycle  
• TTL compatible inputs and outputs; tristate I/O  
• Refresh Interval: 1024 cycles /16 ms  
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR),  
Hidden  
• JEDEC standard pinout  
These features make the IS41C8512and IS41LV8512 ideally  
suited for high-bandwidth graphics, digital signal processing,  
high-performance computing systems, and peripheral  
applications.  
• Single power supply:  
5V ± 10% (IS41C8512)  
3.3V ± 10% (IS41LV8512)  
• Byte Write and Byte Read operation via CAS  
• Industrail Temperature Range -40oC to 85oC  
The IS41C8512 is packaged in a 28-pin 400mil SOJ and  
400mil TSOP-2.  
KEY TIMING PARAMETERS  
Parameter  
-35  
35  
10  
18  
12  
60  
-50  
50  
14  
25  
20  
90  
-60  
60  
Unit  
ns  
Max. RAS Access Time (tRAC)  
Max. CAS Access Time (tCAC)  
Max. Column Address Access Time (tAA)  
Min. EDO Page Mode Cycle Time (tPC)  
Min. Read/Write Cycle Time (tRC)  
15  
ns  
30  
ns  
25  
ns  
110  
ns  
PIN CONꢀIGURATIONS  
28 Pin SOJ, TSOP-2  
PIN DESCRIPTIONS  
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
NC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
GND  
I/O7  
I/O6  
I/O5  
I/O4  
CAS  
OE  
A0-A9  
I/O0-7  
WE  
Address Inputs  
Data Inputs/Outputs  
Write Enable  
2
3
4
5
OE  
Output Enable  
Row Address Strobe  
Column Address Strobe  
Power  
6
RAS  
CAS  
Vcc  
WE  
RAS  
A9  
7
8
NC  
9
A8  
A0  
10  
11  
12  
13  
14  
A7  
GND  
NC  
Ground  
A1  
A6  
No Connection  
A2  
A5  
A3  
A4  
VCC  
GND  
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors  
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.  
Integrated Circuit Solution Inc.  
DR008-0B  
1

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