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IS24C256-2BI PDF预览

IS24C256-2BI

更新时间: 2024-11-08 19:42:07
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟内存集成电路
页数 文件大小 规格书
12页 84K
描述
EEPROM, 32KX8, Serial, CMOS, PBGA8, BGA-8

IS24C256-2BI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.92最大时钟频率 (fCLK):0.1 MHz
JESD-30 代码:R-PBGA-B8JESD-609代码:e0
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:32768 words
字数代码:32000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:SERIAL
峰值回流温度(摄氏度):240认证状态:Not Qualified
串行总线类型:I2C最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子位置:BOTTOM
处于峰值回流温度下的最长时间:30最长写入周期时间 (tWC):10 ms
Base Number Matches:1

IS24C256-2BI 数据手册

 浏览型号IS24C256-2BI的Datasheet PDF文件第2页浏览型号IS24C256-2BI的Datasheet PDF文件第3页浏览型号IS24C256-2BI的Datasheet PDF文件第4页浏览型号IS24C256-2BI的Datasheet PDF文件第5页浏览型号IS24C256-2BI的Datasheet PDF文件第6页浏览型号IS24C256-2BI的Datasheet PDF文件第7页 
®
IS24C128-2/3  
IS24C256-2/3  
262,144-bit/131,072-bit 2-WIRE SERIAL  
CMOS EEPROM  
ISSI  
PRELIMINARY INFORMATION  
NOVEMBER 2001  
FEATURES  
• Low Power CMOS Technology  
• 8-pin PDIP,8-pin SOIC, and 8-ball BGA  
• Self time write cycle with auto clear  
– Standby Current less than 10 µA (5.5V)  
– Read Current (typical) less than 1 mA (5.5V)  
– Write Current (typical) less than 3 mA (5.5V)  
• Low Voltage Operation  
– 5 ms @ 2.5V  
• Organization:  
– IS24C256-2 and IS24C256-3: 32,768x8  
– IS24C128-2 and IS24C128-3: 16,384x8  
• 64-Byte Page Write Buffer  
• Two-Wire Serial Interface  
– IS24C256-2 & IS24C128-2: Vcc = 1.8V to 5.5V  
– IS24C256-3 & IS24C128-3: Vcc = 2.5V to 5.5V  
• 100 KHz (1.8V) and 400 KHz (5V) Compatibility  
• Hardware Data Protection  
– Bi-directional data transfer protocol  
• High Reliability  
– Write Protect Pin  
• Sequential Read Feature  
– Endurance: 1,000,000 Cycles  
– Data Retention: 100 Years  
• Commercial and Industrial temperature ranges  
• Filtered Inputs for Noise Suppression  
PRODUCT OFFERING OVERVIEW  
Part No  
Voltage  
1.8V-5.5V  
2.5V-5.5V  
1.8V-5.5V  
2.5V-5.5V  
Speed  
Standby ICC  
< 5 µA  
Read ICC  
1 mA  
Write ICC  
3 mA  
Temperature  
IS24C256-2  
IS24C256-3  
IS24C128-2  
IS24C128-3  
100 KHz  
400 KHz  
100 KHz  
400 KHz  
C,I  
C,I  
C,I  
C,I  
< 10 µA  
< 5 µA  
1 mA  
3 mA  
1 mA  
3 mA  
< 10 µA  
1 mA  
3 mA  
DESCRIPTION  
TheIS24C128-2isa1.8V(1.8V-5.5V)128K-bit(16384 x 8)  
Electrically Erasable PROM, IS24C128-3 is a 2.5V (2.5V-  
5.5V) 128K-bit (16384 x 8) Electrically Erasable PROM,  
IS24C256-2 is a 1.8V (1.8V-5.5V) 256K-bit (32768 x 8)  
Electrically Erasable PROM and the IS24C256-3 is a 2.5V  
(2.5V-5.5V) 256K-bit (32768 x 8) Electrically Erasable  
PROM.  
The IS24CXXX (IS24C128-2, IS24C128-3, IS24C256-2  
and IS24C1256-3) family is a low-cost and low voltage 2-  
wireSerialEEPROM. ItisfabricatedusingISSI’sadvanced  
CMOS EEPROM technology and provides a low power  
and low voltage operation. The IS24CXXX family features  
a write protection feature, and is available in 8-pin DIP, 8-  
pin SOIC, and 8-ball BGA packages.  
This document contains PRELIMINARY INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the  
best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
PRELIMINARYINFORMATION Rev. 00A  
1
11/01/01  

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