是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-252 |
包装说明: | DPAK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.23 |
雪崩能效等级(Eas): | 24 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 2.7 A | 最大漏源导通电阻: | 1.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 9 A |
认证状态: | COMMERCIAL | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLR211 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal |
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IRLR220 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal |
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IRLR220A | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET |
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IRLR220A | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR220ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR220ATF | ROCHESTER |
获取价格 |
4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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IRLR220ATM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR221 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal |
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IRLR224 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR230 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7.5A I(D) | TO-252AA |
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