生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 4 A | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 1.2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 42 W |
最大功率耗散 (Abs): | 42 W | 最大脉冲漏极电流 (IDM): | 16 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 115 ns |
最大开启时间(吨): | 100 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLR224 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 250V, 1.3ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR230 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7.5A I(D) | TO-252AA |
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IRLR230A | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET |
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IRLR230ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR230ATM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR2703 | INFINEON |
获取价格 |
POWER MOSFET |
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IRLR2703PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR2703TR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR2703TRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR2703TRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Met |
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