是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.18 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 210 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 7.7 A | 最大漏极电流 (ID): | 7.7 A |
最大漏源导通电阻: | 0.27 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 42 W |
最大脉冲漏极电流 (IDM): | 31 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLR121 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 7.9A I(D), 80V, 0.4ohm, 1-Element, N-Channel, Silicon, Meta |
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IRLR130A | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET |
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IRLR130ATF | ROCHESTER |
获取价格 |
13A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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IRLR130ATM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR210 | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET |
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IRLR210A | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET |
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IRLR210ATM | ROCHESTER |
获取价格 |
2.7A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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IRLR210ATM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR211 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal |
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IRLR220 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal |
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