Datasheet > IRLR130A

IRLR130A

更新时间： 2024-01-19 05:28:46

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	268K
描述
ADVANCED POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRLR130A 数据手册

IRLR/U130A

FEATURES

BV_DSS= 100 V

R_DS(on)= 0.12Ω

I_D= 13 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

♦

Improved Gate Charge

Extended Safe Operating Area

D-PAK

I-PAK

Lower Leakage Current: 10 A (Max.) @ V_DS= 100V

Lower R_DS(ON): 0.101 (Typ.)

Ω

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

100

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25°C)

Continuous Drain Current (T_C=100°C)

Drain Current-Pulsed

I_D

I_DM

V_GS

E_AS

I_AR

(1)

Gate-to-Source Voltage

(2)

(1)

(3)

Single Pulsed Avalanche Energy

Avalanche Current

225

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.6

6.5

2.5

V/ns

Total Power Dissipation (T_A=25°C)

Total Power Dissipation (T_C=25°C)

Linear Derating Factor

P_D

0.37

W/°C

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

°C

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

T_L

Thermal Resistance

Symbol

R_θJC

Characteristic

Typ.

Max.

Units

Junction-to-Case

2.7

R_θJA

Junction-to-Ambient

°C/W

R_θJA

110

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7...9

中文翻译

下载PDF

IRLR130A 替代型号

型号	品牌	替代类型	描述	数据表
IRLR130ATM	FAIRCHILD	功能相似	Power Field-Effect Transistor, 13A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met

与IRLR130A相关器件

型号	品牌	获取价格	描述	数据表
IRLR130ATF	ROCHESTER	获取价格	13A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
IRLR130ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 13A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRLR210	FAIRCHILD	获取价格	ADVANCED POWER MOSFET
IRLR210A	FAIRCHILD	获取价格	ADVANCED POWER MOSFET
IRLR210ATM	ROCHESTER	获取价格	2.7A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
IRLR210ATM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRLR211	SAMSUNG	获取价格	Power Field-Effect Transistor, 2A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal
IRLR220	SAMSUNG	获取价格	Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal
IRLR220A	FAIRCHILD	获取价格	ADVANCED POWER MOSFET
IRLR220A	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met