型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRLR130ATM | FAIRCHILD |
功能相似 ![]() |
Power Field-Effect Transistor, 13A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRLR130ATF | ROCHESTER |
获取价格 |
13A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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IRLR130ATM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR210 | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET |
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IRLR210A | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET |
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IRLR210ATM | ROCHESTER |
获取价格 |
2.7A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 |
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IRLR210ATM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Met |
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IRLR211 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal |
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IRLR220 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal |
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IRLR220A | FAIRCHILD |
获取价格 |
ADVANCED POWER MOSFET |
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IRLR220A | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Met |
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