IRLR120N

更新时间： 2024-01-07 22:30:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	175K
描述
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRLR120N 数据手册

PD - 91541B

IRLR/U120N

HEXFET^®Power MOSFET

Surface Mount (IRLR120N)

Straight Lead (IRLU120N)

Advanced Process Technology

Fast Switching

V_DSS= 100V

R_DS(on)= 0.185Ω

Fully Avalanche Rated

I_D= 10A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

D -PAK

TO -252AA

I-PAK

TO -251AA

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

7.0

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.32

± 16

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

6.0

4.8

5.0

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.1

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

R_θJA

110

www.irf.com

5/11/98

12 3 4 5 6 7...10

中文翻译

下载PDF

IRLR120N 替代型号

型号	品牌	替代类型	描述	数据表
IRLR120NTRLPBF	INFINEON	功能相似	Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Me
IRLR120NTRPBF	INFINEON	功能相似	Surface Mount (IRLR120N)
IRLR120NPBF	INFINEON	功能相似	HEXFET㈢ Power MOSFET

与IRLR120N相关器件

型号	品牌	获取价格	描述	数据表
IRLR120NPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRLR120NTR	INFINEON	获取价格	Advanced Process Technology
IRLR120NTR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C
IRLR120NTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Me
IRLR120NTRPBF	INFINEON	获取价格	Surface Mount (IRLR120N)
IRLR120PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRLR120PBF	VISHAY	获取价格	Power MOSFET
IRLR120TRL	VISHAY	获取价格	Power MOSFET
IRLR120TRLPBF	VISHAY	获取价格	Power MOSFET
IRLR120TRPBF	VISHAY	获取价格	Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R