IRL3716PBF

更新时间： 2024-11-27 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
12页	283K
描述
SMPS MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRL3716PBF 数据手册

PD - 95448

IRL3716PbF

IRL3716SPbF

IRL3716LPbF

SMPS MOSFET

Applications

HEXFET^®Power MOSFET

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

l Active Oring

V_DSS

20V

R_DS(on)max

I_D

180A

4.0mΩ

l Lead-Free

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRL3716S

TO-262

IRL3716L

TO-220AB

IRL3716

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

180

130

720

P_D@T_C= 25°C

P_D@T_C= 100°C

Maximum Power Dissipation

Linear Derating Factor

210

100

1.4

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

0.72

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB mount)ꢀ

°C/W

Notes through are on page 11

www.irf.com

6/22/04

12 3 4 5 6 7...12

中文翻译

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IRL3716PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRLB3034PBF	INFINEON	类似代替	HEXFET Power MOSFET

与IRL3716PBF相关器件

型号	品牌	获取价格	描述	数据表
IRL3716S	INFINEON	获取价格	HEXFET Power MOSFET
IRL3716SPBF	INFINEON	获取价格	SMPS MOSFET
IRL3716STRL	INFINEON	获取价格	暂无描述
IRL3716STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Me
IRL3716STRR	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Me
IRL3716STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 180A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Me
IRL3803	FREESCALE	获取价格	HEXFETÂ® Power MOSFET
IRL3803	INFINEON	获取价格	Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=1
IRL3803-007	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Me
IRL3803-011	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Me