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IRL3803S PDF预览

IRL3803S

更新时间: 2024-11-19 12:23:47
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飞思卡尔 - FREESCALE 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 8269K
描述
HEXFET® Power MOSFET

IRL3803S 数据手册

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IRL3803S/L  
HEXFET® Power MOSFET  
l Logic-Level Gate Drive  
l Advanced Process Technology  
l Surface Mount (IRL3803S)  
l Low-profile through-hole (IRL3803L)  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 30V  
RDS(on) = 0.006Ω  
G
l Fully Avalanche Rated  
ID = 140A†  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power MOSFETs  
arewellknownfor, providesthedesignerwithanextremely  
efficient and reliable device for use in a wide variety of  
applications.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pak is suitable for high current applications because of  
its low internal connection resistance and can dissipate  
up to 2.0W in a typical surface mount application.  
The through-hole version (IRL3803L) is available for low-  
profileapplications.  
2
TO-262  
D
Pak  
Absolute Maximum Ratings  
Parameter  
Max.  
140†  
98†  
470  
3.8  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vꢀ  
Continuous Drain Current, VGS @ 10Vꢀ  
Pulsed Drain Current ꢀ  
A
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
W
W
Power Dissipation  
200  
1.3  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
±16  
610  
71  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
20  
mJ  
5.0  
V/ns  
-55 to + 175  
300 (1.6mm from case )  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.75  
Units  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient ( PCB Mounted,steady-state)**  
–––  
40  
www.freescale.net.cn  
1 / 10  

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