Datasheet > IRL40SC228

IRL40SC228

更新时间： 2024-11-24 11:15:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	650K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRL40SC228 数据手册

IR MOSFET

StrongIRFET™

IRL40SC228

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

R_DS(on)typ.

max

40V

0.50m

0.65m

557A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

360A

Benefits

 Optimized for Logic Level Drive

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free*

D2PAK-7Pin

IRL40SC228

 RoHS Compliant, Halogen-Free

Gate

Drain

Source

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Tape and Reel Left

Quantity

IRL40SC228

D2PAK-7Pin

800

IRL40SC228

600

500

400

300

200

100

= 100A

LIMITED BY PACKAGE

T = 125°C

T = 25°C

100

125

150

175

, Gate-to-Source Voltage (V)

T , Case Temperature (°C)

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

2017-05-12

12 3 4 5 6 7...10

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