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IRL3803VLPBF

更新时间： 2024-11-19 04:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	270K
描述
HEXFET Power MOSFET

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数据手册

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IRL3803VLPBF 数据手册

PD - 95449

IRL3803VSPbF

IRL3803VLPbF

HEXFET^®Power MOSFET

^lLogic-Level Gate Drive

l Advanced Process Technology

l Surface Mount (IRL3803VS)

l Low-profile through-hole (IRL3803VL)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 30V

R_DS(on)= 5.5mΩ

l Fully Avalanche Rated

l Lead-Free

I_D= 140A

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating

diesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowest

possible on-resistance in any existing surface mount package. The D²Pak

issuitableforhighcurrentapplicationsbecauseofitslowinternalconnection

resistance and can dissipate up to 2.0W in a typical surface mount

application.

D²Pak

IRL3803VS

TO-262

IRL3803VL

Absolute Maximum Ratings

Parameter

Max.

140

110

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

470

P_D@T_A= 25°C

P_D@T_C= 25°C

3.8

Power Dissipation

200

Linear Derating Factor

1.4

W/°C

V_GS

I_AR

Gate-to-Source Voltage

± 16

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient (PCB Mounted, steady state)

Typ.

–––

Max.

0.75

Units

R_θJC

R_θJA

°C/W

www.irf.com

1/4/05

12 3 4 5 6 7...10

中文翻译

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