Datasheet > IRL3716STRLPBF

IRL3716STRLPBF

更新时间： 2024-11-24 21:13:59

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
12页	278K
描述
Power Field-Effect Transistor, 180A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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数据手册

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IRL3716STRLPBF 数据手册

PD - 95448

IRL3716PbF

IRL3716SPbF

IRL3716LPbF

SMPS MOSFET

Applications

HEXFET^®Power MOSFET

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Computer Processor Power

l Active Oring

V_DSS

20V

R_DS(on)max

I_D

180A

4.0mΩ

l Lead-Free

Benefits

l Ultra-Low Gate Impedance

l Very Low R_DS(on)at 4.5V V_GS

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRL3716S

TO-262

IRL3716L

TO-220AB

IRL3716

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Drain-Source Voltage

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

180

130

720

P_D@T_C= 25°C

P_D@T_C= 100°C

Maximum Power Dissipation

Linear Derating Factor

210

100

1.4

W/°C

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

0.72

–––

Units

R_θJC

R_θCS

R_θJA

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB mount)ꢀ

°C/W

Notes through are on page 11

www.irf.com

6/22/04

12 3 4 5 6 7...12

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