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IRL3716LPBF PDF预览

IRL3716LPBF

更新时间: 2024-11-24 04:23:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
12页 283K
描述
SMPS MOSFET

IRL3716LPBF 数据手册

 浏览型号IRL3716LPBF的Datasheet PDF文件第2页浏览型号IRL3716LPBF的Datasheet PDF文件第3页浏览型号IRL3716LPBF的Datasheet PDF文件第4页浏览型号IRL3716LPBF的Datasheet PDF文件第5页浏览型号IRL3716LPBF的Datasheet PDF文件第6页浏览型号IRL3716LPBF的Datasheet PDF文件第7页 
PD - 95448  
IRL3716PbF  
IRL3716SPbF  
IRL3716LPbF  
SMPS MOSFET  
Applications  
HEXFET® Power MOSFET  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l High Frequency Buck Converters for  
Computer Processor Power  
l Active Oring  
VDSS  
20V  
RDS(on) max  
ID  
180A  
†
4.0mΩ  
l Lead-Free  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
IRL3716S  
TO-262  
IRL3716L  
TO-220AB  
IRL3716  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
20  
Units  
V
VGS  
Gate-to-Source Voltage  
± 20  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
180†  
130  
A
720  
PD @TC = 25°C  
PD @TC = 100°C  
Maximum Power Dissipationƒ  
Maximum Power Dissipationƒ  
Linear Derating Factor  
210  
W
W
100  
1.4  
W/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 175  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
0.72  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
–––  
0.50  
–––  
–––  
Case-to-Sink, Flat, Greased Surface „  
Junction-to-Ambient„  
Junction-to-Ambient (PCB mount)ꢀ  
°C/W  
40  
Notes  through † are on page 11  
www.irf.com  
1
6/22/04  

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