是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.24 |
其他特性: | LOGIC LEVEL COMPATIBLE | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 92 A | 最大漏源导通电阻: | 0.01 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRL2203-019 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta |
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IRL2203-019PBF | INFINEON |
获取价格 |
92A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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IRL2203-030 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta |
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IRL2203-030PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta |
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IRL2203-031 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta |
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IRL2203-031PBF | INFINEON |
获取价格 |
92A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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IRL2203N | INFINEON |
获取价格 |
Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=11 |
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IRL2203N | FREESCALE |
获取价格 |
HEXFET® Power MOSFET |
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IRL2203N-004 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Me |
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IRL2203N-006 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Me |
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