IRL2203NSPBF

更新时间： 2024-01-26 15:20:02

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	227K
描述
HEXFET㈢ Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRL2203NSPBF 数据手册

PD - 95219

IRL2203NSPbF

IRL2203NLPbF

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 30V

l Fully Avalanche Rated

l 100% R_GTested

R_DS(on)= 7.0mΩ

l Lead-Free

I_D= 116A

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating

diesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowest

possible on-resistance in any existing surface mount package. The D²Pak

issuitableforhighcurrentapplicationsbecauseofitslowinternalconnection

resistanceandcandissipateupto2.0Winatypicalsurfacemountapplication.

Thethrough-holeversion(IRL2203NL)isavailableforlow-profileapplications.

D²Pak

IRL2203NS

TO-262

IRL2203NL

Absolute Maximum Ratings

Symbol

Parameter

Max

116

Units

Continuous Drain Current, V_GS@ 10V

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

@ T_C= 100°C

400

3.8

180

Pulsed Drain Current

@T_A= 25°C

@T_C= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

1.2

± 16

W/°C

Avalanche Current

I_AR

Repetitive Avalanche Energy

E_AR

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

°C

Storage Temperature Range

T_STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Symbol

Parameter

Typ

–––

Max

0.85

Units

Junction-to-Case

R_θJC

°C/W

Junction-to-Ambient (PCB mount, steady state)

R_θJA

www.irf.com

04/27/04

12 3 4 5 6 7...11

中文翻译

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IRL2203NSPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRL2203NSTRLPBF	INFINEON	功能相似	Advanced Process Technology
IRL2203NS	INFINEON	功能相似	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=11

与IRL2203NSPBF相关器件

型号	品牌	获取价格	描述	数据表
IRL2203NSPBF_15	INFINEON	获取价格	Advanced Process Technology
IRL2203NSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
IRL2203NSTRLPBF	INFINEON	获取价格	Advanced Process Technology
IRL2203NSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
IRL2203NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
IRL2203S	INFINEON	获取价格	Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=1
IRL2203SPBF	INFINEON	获取价格	Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRL2203STRL	INFINEON	获取价格	暂无描述
IRL2203STRLPBF	INFINEON	获取价格	暂无描述
IRL2203STRR	INFINEON	获取价格	Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta

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