Datasheet > IRL2203NSTRLPBF

IRL2203NSTRLPBF

更新时间： 2024-02-20 12:05:22

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	295K
描述
Advanced Process Technology

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中文翻译

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数据手册
替代型号

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IRL2203NSTRLPBF 数据手册

PD - 95219A

IRL2203NSPbF

IRL2203NLPbF

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 30V

l Fully Avalanche Rated

l 100% R_GTested

R_DS(on)= 7.0mΩ

l Lead-Free

I_D= 116A

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistancepersiliconarea.Thisbenefit,combinedwiththefastswitching

speed and ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of accommodating

diesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowest

possible on-resistance in any existing surface mount package. The D²Pak

issuitableforhighcurrentapplicationsbecauseofitslowinternalconnection

resistanceandcandissipateupto2.0Winatypicalsurfacemountapplication.

Thethrough-holeversion(IRL2203NL)isavailableforlow-profileapplications.

D²Pak

IRL2203NSPbF

TO-262

IRL2203NLPbF

Absolute Maximum Ratings

Symbol

Parameter

Max

Units

Continuous Drain Current, V_GS@ 10V

116

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_C= 100°C

400

3.8

180

@T_A= 25°C

@T_C= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

1.2

± 16

W/°C

I_AR

Repetitive Avalanche Energy

E_AR

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 175

°C

Storage Temperature Range

T_STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Thermal Resistance

Symbol

Parameter

Typ

–––

Max

0.85

Units

Junction-to-Case

R_θ

°C/W

Junction-to-Ambient (PCB mount, steady state)

www.irf.com

10/01/10

12 3 4 5 6 7...10

中文翻译

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IRL2203NSTRLPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRL2203NSTRRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
IRL2203NSPBF	INFINEON	功能相似	HEXFET㈢ Power MOSFET
IRL2203NS	INFINEON	功能相似	Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=11

与IRL2203NSTRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRL2203NSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
IRL2203NSTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met
IRL2203S	INFINEON	获取价格	Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=1
IRL2203SPBF	INFINEON	获取价格	Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRL2203STRL	INFINEON	获取价格	暂无描述
IRL2203STRLPBF	INFINEON	获取价格	暂无描述
IRL2203STRR	INFINEON	获取价格	Power Field-Effect Transistor, 92A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
IRL2310	INFINEON	获取价格	HEXFET Power MOSFET
IRL2310PBF	INFINEON	获取价格	Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met
IRL2505	INFINEON	获取价格	Power MOSFET

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