Datasheet > IRL2203NS.IRL2203NL

IRL2203NS.IRL2203NL

更新时间： 2024-01-10 15:28:29

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PD - 9.1367C

IRL2203NS/L

HEXFET^®Power MOSFET

^lLogic-Level Gate Drive

l Advanced Process Technology

l Surface Mount (IRL2203NS)

l Low-profilethrough-hole(IRL2203NL)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 30V

R_DS(on)= 0.007Ω

l Fully Avalanche Rated

Description

I_D= 116A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

Thethrough-holeversion(IRL2203NL)isavailableforlow-

profileapplications.

Pa k

T O -2 6 2

Absolute Maximum Ratings

Parameter

Max.

116

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

400

3.8

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

170

1.1

Linear Derating Factor

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 16

390

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

5.0

-55 to + 175

300 (1.6mm from case )

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

0.90

Units

R_θJC

R_θJA

°C/W

8/25/97

12 3 4 5 6 7...10

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