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IRGPH30S PDF预览

IRGPH30S

更新时间: 2024-10-31 22:32:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
2页 73K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=13A)

IRGPH30S 数据手册

 浏览型号IRGPH30S的Datasheet PDF文件第2页 
Previous Datasheet  
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Preliminary Data Sheet PD - 9.1139  
IRGPH30S  
INSULATED GATE BIPOLAR TRANSISTOR  
Standard Speed IGBT  
Features  
C
• Switching-loss rating includes all "tail" losses  
• Optimized for line frequency operation (to 400Hz)  
VCES = 1200V  
V
CE(sat) 3.0V  
G
@VGE = 15V, IC = 13A  
E
n-channel  
Description  
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have  
higher usable current densities than comparable bipolar transistors, while at  
the same time having simpler gate-drive requirements of the familiar power  
MOSFET. They provide substantial benefits to a host of high-voltage, high-  
current applications.  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current  
1200  
V
IC @ TC = 25°C  
22  
IC @ TC = 100°C  
13  
A
ICM  
44  
ILM  
Clamped Inductive Load Current  
Gate-to-Emitter Voltage  
44  
±20  
VGE  
V
mJ  
W
EARV  
Reverse Voltage Avalanche Energy  
Maximum Power Dissipation  
10  
PD @ TC = 25°C  
100  
PD @ TC = 100°C Maximum Power Dissipation  
13  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting torque, 6-32 or M3 screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Min.  
Typ.  
Max.  
1.2  
Units  
°C/W  
RθJC  
RθCS  
RθJA  
Wt  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
0.24  
40  
6 (0.21)  
g (oz)  
Revision 0  
C-45  
To Order  
 

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