IRFY9240(M)

更新时间： 2024-11-11 13:08:51

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IRFY9240(M) 数据手册

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Provisional Data Sheet No. PD 9.1295A

IRFY9240CM

HEXFET^®POWERMOSFET

P-CHANNEL

-200Volt, 0.51Ω HEXFET

Product Summary

International Rectifier’s HEXFET technology is the key to

its advanced line of power MOSFET transistors.The effi-

cient geometry design achieves very low on-state resis-

tance combined with high transconductance.

Part Number

DSS

DS(on)

IRFY9240CM

-200V

0.51Ω

-9.4A

Features

HEXFET power MOSFETs also feature all of the well-

established advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and electri-

cal parameter temperature stability.They are well-suited

for applications such as switching power supplies, motor

controls, inverters, choppers, audio amplifiers, high en-

ergy pulse circuits, and virtually any application where

high reliability is required.

n Hermetically Sealed

n Electrically Isolated

n Simple Drive Requirements

n Ease of Paralleling

The HEXFET power MOSFET’s totally isolated package

eliminates the need for additional isolating material between

the device and the heatsink.This improves thermal effi-

ciency and reduces drain capacitance.

Absolute Maximum Ratings

Parameter

IRFY9240CM

Units

@ V = -10V, T = 25°C

Continuous Drain Current

-9.4

-6.0

@ V = -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

-36

@ T = 25°C

100

W/Kꢀ

0.8

Gate-to-Source Voltage

Single Pulse Avalance Energy

Avalance Current

±20

700

-9.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

V/ns

dv/dt

-5.5

-55 to 150

Storage Temperature Range

°C

stg

LeadTemperature

Weight

300 (0.063 in (1.6mm) from case for 10 sec)

4.3(typical)

* I_Dcurrent limited by pin diameter

To Order

12 3 4 5 6

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与IRFY9240(M)相关器件

型号	品牌	获取价格	描述	数据表
IRFY9240(M)PBF	INFINEON	获取价格	暂无描述
IRFY9240C	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-257AA
IRFY9240C	SEME-LAB	获取价格	P-Channel MOSFET in a Hermetically sealed
IRFY9240CM	INFINEON	获取价格	POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A)
IRFY9240CMPBF	INFINEON	获取价格	9.4A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA, HERMETIC SEALED, TO-257AA, 3
IRFY9240CMSCX	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240CMSCXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240CSCX	INFINEON	获取价格	-200V Single P-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TX
IRFY9240EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me
IRFY9240EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Me

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