IRFY130CMSCXPBF

更新时间： 2024-11-20 13:08:47

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英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
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IRFY130CMSCXPBF 数据手册

PD - 94183

IRFY130,IRFY130M

100V, N-CHANNEL

POWER MOSFET

THRU-HOLE (TO-257AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number RDS(on)

Eyelets

IRFY130

0.18 Ω

14.4A Glass

IRFY130M

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-257AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Glass Eyelets

For Space Level Applications

Refer to Ceramic Version Part

Numbers IRFY130C, IRFY130CM

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C Continuous Drain Current

14.4

9.1

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

57.6

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

14.4

7.5

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

5.5

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300(0.063in./1.6mm from case for 10 sec)

3.3 (Typical)

For footnotes refer to the last page

www.irf.com

4/18/01

12 3 4 5 6 7

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