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IRFY140CMSCS PDF预览

IRFY140CMSCS

更新时间： 2024-11-20 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 164K
描述
Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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IRFY140CMSCS 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.7其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：230 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (ID)：16 A最大漏源导通电阻：0.077 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-257AA
JESD-30 代码：R-XSFM-P3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：100 A
认证状态：Not Qualified表面贴装：NO
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRFY140CMSCS 数据手册

 浏览型号IRFY140CMSCS的Datasheet PDF文件第2页浏览型号IRFY140CMSCS的Datasheet PDF文件第3页浏览型号IRFY140CMSCS的Datasheet PDF文件第4页浏览型号IRFY140CMSCS的Datasheet PDF文件第5页浏览型号IRFY140CMSCS的Datasheet PDF文件第6页浏览型号IRFY140CMSCS的Datasheet PDF文件第7页 
PD - 91287C  
IRFY140C,IRFY140CM  
100V, N-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number  
IRFY140C  
RDS(on)  
ID  
Eyelets  
Ceramic  
Ceramic  
0.077 Ω 16*A  
0.077 Ω 16*A  
IRFY140CM  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-257AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Eyelets  
Ideally Suited For Space Level  
Applications  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C Continuous Drain Current  
16*  
16*  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
C
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
64  
DM  
@ T = 25°C  
P
D
100  
W
W/°C  
V
C
0.8  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
230  
mJ  
A
AS  
I
16*  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
10  
mJ  
V/ns  
AR  
dv/dt  
5.5  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300(0.063in./1.6mm from case for 10 sec)  
4.3 (Typical)  
* Current is limited by pin diameter  
For footnotes refer to the last page  
www.irf.com  
1
4/18/01  
1234567

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IRFY140CMSCX INFINEON

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 		Power Field-Effect Transistor, 18A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
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 		Power Field-Effect Transistor, 18A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Met

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