IRFY130MEA

更新时间： 2024-11-20 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	167K
描述
Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

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IRFY130MEA 数据手册

PD - 94183

IRFY130,IRFY130M

100V, N-CHANNEL

POWER MOSFET

THRU-HOLE (TO-257AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number RDS(on)

Eyelets

IRFY130

0.18 Ω

14.4A Glass

IRFY130M

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-257AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Glass Eyelets

For Space Level Applications

Refer to Ceramic Version Part

Numbers IRFY130C, IRFY130CM

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C Continuous Drain Current

14.4

9.1

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

57.6

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

14.4

7.5

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

5.5

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300(0.063in./1.6mm from case for 10 sec)

3.3 (Typical)

For footnotes refer to the last page

www.irf.com

4/18/01

12 3 4 5 6 7

中文翻译

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与IRFY130MEA相关器件

型号	品牌	获取价格	描述	数据表
IRFY130SM	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 14A I(D) \| CHIP
IRFY1310M-T257	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
IRFY140	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
IRFY140C	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
IRFY140C	INFINEON	获取价格	POWER MOSFET THRU-HOLE (TO-257AA)
IRFY140CM	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A)
IRFY140CMPBF	INFINEON	获取价格	暂无描述
IRFY140CMSCS	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRFY140CMSCV	INFINEON	获取价格	100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package - Screening Level TXV
IRFY140CMSCX	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me

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