Datasheet > IRFU2307Z

IRFU2307Z

更新时间： 2024-11-06 11:59:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
9页	649K
描述
HEXFETÂ® Power MOSFET

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中文翻译

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数据手册

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IRFU2307Z 数据手册

IRFR2307Z

IRFU2307Z

Features

HEXFET^®Power MOSFET

lAdvanced Process Technology

lUltra Low On-Resistance

l175°C Operating Temperature

lFast Switching

V_DSS= 75V

lRepetitive Avalanche Allowed up to Tjmax

R_DS(on)= 16mΩ

Description

I_D= 42A

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

D-Pak

I-Pak

IRFU2307Z

IRFR2307Z

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@ T = 25°C

210

110

@T = 25°C Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

0.70

± 20

W/°C

E_{AS (Thermally limited)}

100

140

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

Operating Junction and

E_AR

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.42

Units

Junction-to-Case

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

–––

°C/W

–––

110

HEXFET^®isaregisteredtrademarkofInternationalRectifier.

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中文翻译

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