PD - 95953
AUTOMOTIVE MOSFET
IRFR2307ZPbF
IRFU2307ZPbF
Features
HEXFET® Power MOSFET
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Advanced Process Technology
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UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
VDSS = 75V
RDS(on) = 16mΩ
G
Description
ID = 42A
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
S
D-Pak
I-Pak
IRFU2307Z
IRFR2307Z
Absolute Maximum Ratings
Parameter
Max.
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
I
I
I
I
@ T = 25°C
53
D
D
D
C
@ T = 100°C
38
42
A
C
@ T = 25°C
C
210
110
DM
P
@T = 25°C Power Dissipation
W
D
C
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
0.70
± 20
W/°C
V
V
GS
EAS (Thermally limited)
100
140
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
EAS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
Operating Junction and
EAR
mJ
T
T
-55 to + 175
J
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
1.42
40
Units
Junction-to-Case
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
–––
°C/W
–––
110
www.kersemi.com
1
12/20/04