5秒后页面跳转
IRFU230B PDF预览

IRFU230B

更新时间: 2024-09-15 22:32:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 640K
描述
200V N-Channel MOSFET

IRFU230B 数据手册

 浏览型号IRFU230B的Datasheet PDF文件第2页浏览型号IRFU230B的Datasheet PDF文件第3页浏览型号IRFU230B的Datasheet PDF文件第4页浏览型号IRFU230B的Datasheet PDF文件第5页浏览型号IRFU230B的Datasheet PDF文件第6页浏览型号IRFU230B的Datasheet PDF文件第7页 
IRFR230B / IRFU230B  
200V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters,  
switch mode power supplies, DC-AC converters for  
uninterrupted power supply and motor control.  
7.5A, 200V, R  
= 0.4@V = 10 V  
DS(on) GS  
Low gate charge ( typical 22 nC)  
Low Crss ( typical 22 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
G!  
I-PAK  
IRFU Series  
D-PAK  
IRFR Series  
G
S
G D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRFR230B / IRFU230B  
Units  
V
V
I
Drain-Source Voltage  
200  
7.5  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
4.8  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
30  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
160  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
7.5  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
5.0  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
50  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.4  
W/°C  
°C  
T , T  
-55 to +150  
J
stg  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.5  
50  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2002 Fairchild Semiconductor Corporation  
Rev. C, December 2002  

IRFU230B 替代型号

型号 品牌 替代类型 描述 数据表
FQU10N20L FAIRCHILD

功能相似

200V LOGIC N-Channel MOSFET

与IRFU230B相关器件

型号 品牌 获取价格 描述 数据表
IRFU234A ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 6.6A I(D) | TO-251AA
IRFU234B FAIRCHILD

获取价格

250V N-Channel MOSFET
IRFU2405 INFINEON

获取价格

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=5
IRFU2405 FREESCALE

获取价格

HEXFET® Power MOSFET
IRFU2405PBF KERSEMI

获取价格

Surface Mount (IRFR2405) Straight Lead (IRFU2405) Advanced Process Technology
IRFU2405PBF INFINEON

获取价格

HEXFET Power MOSFET
IRFU2407 INFINEON

获取价格

Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=4
IRFU2407 KERSEMI

获取价格

Power MOSFET
IRFU2407PBF KERSEMI

获取价格

Surface Mount
IRFU2407PBF INFINEON

获取价格

HEXFET㈢Power MOSFET