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IRFU24N15D PDF预览

IRFU24N15D

更新时间: 2024-11-09 12:23:47
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
9页 331K
描述
HEXFET® Power MOSFET

IRFU24N15D 数据手册

 浏览型号IRFU24N15D的Datasheet PDF文件第2页浏览型号IRFU24N15D的Datasheet PDF文件第3页浏览型号IRFU24N15D的Datasheet PDF文件第4页浏览型号IRFU24N15D的Datasheet PDF文件第5页浏览型号IRFU24N15D的Datasheet PDF文件第6页浏览型号IRFU24N15D的Datasheet PDF文件第7页 
IRFR/U24N15D  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS  
150V  
RDS(on) max  
ID  
24A  
95mΩ  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
IRFR24N15D  
I-Pak  
IRFU24N15D  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
24  
17  
A
96  
PD @TC = 25°C  
Power Dissipation  
140  
W
W/°C  
V
Linear Derating Factor  
0.92  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
4.9  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.1  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)*  
Junction-to-Ambient  
°C/W  
110  
www.freescale.net.cn  
1 / 10  

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