Datasheet > IRFU24N15D

IRFU24N15D

更新时间： 2024-11-24 12:23:47

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	331K
描述
HEXFETÂ® Power MOSFET

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中文翻译

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数据手册

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IRFU24N15D 数据手册

IRFR/U24N15D

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

^lHigh frequency DC-DC converters

V_DSS

150V

R_DS(on)max

I_D

24A

95mΩ

Benefits

^lLow Gate-to-Drain Charge to Reduce

Switching Losses

^lFully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

^lFully Characterized Avalanche Voltage

and Current

D-Pak

IRFR24N15D

I-Pak

IRFU24N15D

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

140

W/°C

Linear Derating Factor

0.92

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

4.9

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.1

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

°C/W

110

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