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IRFU2607ZPBF PDF预览

IRFU2607ZPBF

更新时间: 2024-11-24 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 349K
描述
AUTOMOTIVE MOSFET

IRFU2607ZPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.83峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED

IRFU2607ZPBF 数据手册

 浏览型号IRFU2607ZPBF的Datasheet PDF文件第2页浏览型号IRFU2607ZPBF的Datasheet PDF文件第3页浏览型号IRFU2607ZPBF的Datasheet PDF文件第4页浏览型号IRFU2607ZPBF的Datasheet PDF文件第5页浏览型号IRFU2607ZPBF的Datasheet PDF文件第6页浏览型号IRFU2607ZPBF的Datasheet PDF文件第7页 
PD - 95953  
IRFR2607ZPbF  
IRFU2607ZPbF  
AUTOMOTIVE MOSFET  
Features  
HEXFET® Power MOSFET  
l
Advanced Process Technology  
l
l
l
l
l
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
D
VDSS = 75V  
RDS(on) = 22mΩ  
G
Description  
ID = 42A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processingtechniquestoachieveextremelylowon-  
resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
thisdesignanextremelyefficientandreliabledevice  
foruseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
D-Pak  
I-Pak  
IRFU2607Z  
IRFR2607Z  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
45  
D
D
D
C
@ T = 100°C  
32  
42  
A
C
@ T = 25°C  
C
180  
110  
DM  
P
@T = 25°C Power Dissipation  
W
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
0.72  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
96  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
96  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
Operating Junction and  
EAR  
mJ  
T
T
-55 to + 175  
J
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.38  
40  
Units  
Junction-to-Case  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
www.irf.com  
1
12/21/04  

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