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IRFU330 PDF预览

IRFU330

更新时间: 2024-11-23 22:32:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 114K
描述
HEXFET Power MOSFET

IRFU330 数据手册

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PD - 9.1642A  
IRFR/U3303  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l Surface Mount (IRFR3303)  
l Straight Lead (IRFU3033)  
l Advanced Process Technology  
l Fast Switching  
D
VDSS = 30V  
RDS(on) = 0.031Ω  
ID = 33A  
G
l Fully Avalanche Rated  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This benefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor, providesthedesignerwithanextremelyefficient  
and reliable device for use in a wide variety of applications.  
I-Pa k  
D -Pa k  
T O -2 52 A A  
TO -2 5 1 AA  
The D-Pak is designed for surface mounting using vapor  
phase, infrared, orwavesolderingtechniques. Thestraight  
lead version (IRFU series) is for through-hole mounting  
applications. Power dissipation levels up to 1.5 watts are  
possible in typical surface mount applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
33ꢀ  
21ꢀ  
120  
57  
A
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
0.45  
± 20  
95  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
18  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
5.7  
mJ  
V/ns  
5.0  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
2.2  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)**  
Junction-to-Ambient  
°C/W  
110  
8/25/97  

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