IRFU3518

更新时间： 2024-11-23 22:18:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	548K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFU3518 数据手册

PD - 94523

IRFR3518

IRFU3518

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSS

R_DS(on)max

I_D

80V

29mW

30A

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR3518

I-Pak

IRFU3518

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

150

P_D@T_C= 25°C

Power Dissipation

110

Linear Derating Factor

0.71

W/°C

V/ns

dv/dt

T_J

Peak Diode Recovery dv/dt

Operating Junction and

5.2

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJC

R_θJA

Junction-to-Case

–––

1.4

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

Notes through are on page 10

www.irf.com

09/23/02

12 3 4 5 6 7...10

中文翻译

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