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IRFU3709PBF PDF预览

IRFU3709PBF

更新时间: 2024-11-24 03:15:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 162K
描述
HEXFET㈢Power MOSFET

IRFU3709PBF 数据手册

 浏览型号IRFU3709PBF的Datasheet PDF文件第2页浏览型号IRFU3709PBF的Datasheet PDF文件第3页浏览型号IRFU3709PBF的Datasheet PDF文件第4页浏览型号IRFU3709PBF的Datasheet PDF文件第5页浏览型号IRFU3709PBF的Datasheet PDF文件第6页浏览型号IRFU3709PBF的Datasheet PDF文件第7页 
PD - 95519A  
IRFU3709PbF  
SMPS MOSFET  
Applications  
HEXFET® Power MOSFET  
l High Frequency Isolated DC-DC  
VDSS  
30V  
RDS(on) max  
ID  
90A  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
l High Frequency Buck Converters for  
Computer Processor Power  
„
9.0mΩ  
l Lead-Free  
Benefits  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
I-Pak  
IRFU3709  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Drain-Source Voltage  
Max.  
30  
Units  
V
VGS  
Gate-to-Source Voltage  
±20  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
90 „  
57 „  
360  
A
PD @TC = 25°C  
PD @TC = 100°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
120  
W
W
48  
0.96  
mW/°C  
°C  
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
1.04  
110  
Units  
RθJC  
RθJA  
Junction-to-Ambient  
–––  
°C/W  
Notes  through „ are on page 9  
www.irf.com  
1
12/06/04  

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