5秒后页面跳转
IRFU3710Z-701PBF PDF预览

IRFU3710Z-701PBF

更新时间: 2024-11-27 19:23:39
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 160K
描述
Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

IRFU3710Z-701PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LEAD FREE, PLASTIC, IPAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.17
Is Samacsys:N其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):150 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):56 A最大漏极电流 (ID):42 A
最大漏源导通电阻:0.018 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):140 W
最大脉冲漏极电流 (IDM):220 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN OVER NICKEL端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFU3710Z-701PBF 数据手册

 浏览型号IRFU3710Z-701PBF的Datasheet PDF文件第2页浏览型号IRFU3710Z-701PBF的Datasheet PDF文件第3页浏览型号IRFU3710Z-701PBF的Datasheet PDF文件第4页浏览型号IRFU3710Z-701PBF的Datasheet PDF文件第5页浏览型号IRFU3710Z-701PBF的Datasheet PDF文件第6页浏览型号IRFU3710Z-701PBF的Datasheet PDF文件第7页 
PD-94061B  
IRFR3711  
IRFU3711  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
l High Frequency Isolated DC-DC  
Converters with Synchronous Rectification  
for Telecom and Industrial Use  
VDSS  
20V  
RDS(on) max  
ID  
„
6.5mΩ  
110A  
l High Frequency Buck Converters for  
Server Processor Power Synchronous FET  
l Optimized for Synchronous Buck  
Converters Including Capacitive Induced  
Turn-on Immunity  
l 100%RGTested  
Benefits  
D-Pak  
IRFR3711  
I-Pak  
IRFU3711  
l Ultra-Low Gate Impedance  
l Very Low RDS(on) at 4.5V VGS  
l Fully Characterized Avalanche Voltage  
and Current  
Absolute Maximum Ratings  
Max  
Symbol  
Parameter  
Units  
VDS  
VGS  
Drain-Source Voltage  
20  
V
Gate-Source Voltage  
± 20  
100  
Continuous Drain Current, VGS @ 10V  
I
I
I
@ T = 25°C  
C
D
D
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
69  
@ T = 100°C  
A
C
440  
2.5  
120  
DM  
Maximum Power Dissipation  
P
P
@TA = 25°C  
W
D
D
@T = 25°C Maximum Power Dissipation  
C
Linear Derating Factor  
0.96  
W/°C  
°C  
TJ, T  
Junction and Storage Temperature Range  
-55 to +150  
STG  
Thermal Resistance  
Symbol  
Parameter  
Typ  
Max  
Units  
Junction-to-Case  
RθJC  
RθJA  
RθJA  
–––  
–––  
–––  
1.04  
50  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
°C/W  
110  
Notes  through † are on page 10  
www.irf.com  
1
1/27/04  

与IRFU3710Z-701PBF相关器件

型号 品牌 获取价格 描述 数据表
IRFU3710ZPBF KERSEMI

获取价格

HEXFET Power MOSFET
IRFU3710ZPBF INFINEON

获取价格

AUTOMOTIVE MOSFET
IRFU3711 INFINEON

获取价格

Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id
IRFU3711 FREESCALE

获取价格

HEXFETPower MOSFET
IRFU3711PBF INFINEON

获取价格

HEXFET Power MOSFET
IRFU3711Z INFINEON

获取价格

HEXFET Power MOSFET
IRFU3711Z KERSEMI

获取价格

High Frequency Synchronous Buck Converters for Computer Processor Power
IRFU3711ZC KERSEMI

获取价格

HEXFETPower MOSFET
IRFU3711ZCPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFU3711ZCPBF KERSEMI

获取价格

HEXFETPower MOSFET