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IRFU3704PBF PDF预览

IRFU3704PBF

更新时间: 2024-11-24 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 218K
描述
HEXFET Power MOSFET

IRFU3704PBF 数据手册

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PD - 95034A  
IRFR3704PbF  
SMPS MOSFET  
IRFU3704PbF  
HEXFET® Power MOSFET  
Applications  
l High Frequency DC-DC Isolated  
Converters with Synchronous Rectification  
for Telecom and Industrial use  
VDSS  
20V  
RDS(on) max  
ID  
75A  
9.5mΩ  
l High Frequency Buck Converters for  
Computer Processor Power  
l 100% RG Tested  
l Lead-Free  
Benefits  
l Ultra-Low RDS(on)  
l Very Low Gate Impedance  
l Fully Characterized Avalanche Voltage  
and Current  
D-Pak  
I-Pak  
IRFR3704  
IRFU3704  
Absolute Maximum Ratings  
Max  
Symbol  
Parameter  
Units  
VDS  
VGS  
Drain-Source Voltage  
20  
V
Gate-Source Voltage  
± 20  
75  
Continuous Drain Current, VGS @ 10V  
I
I
I
@ T = 25°C  
C
D
D
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
63  
@ T = 70°C  
A
C
300  
90  
DM  
Maximum Power Dissipation  
Maximum Power Dissipation  
P
P
@T = 25°C  
C
D
W
@T = 70°C  
62  
D
A
Linear Derating Factor  
0.58  
W/°C  
°C  
TJ, T  
Junction and Storage Temperature Range  
-55 to +175  
STG  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ  
Max  
1.7  
Units  
Rθ  
Rθ  
Rθ  
–––  
–––  
–––  
JC  
JA  
JA  
Junction-to-Ambient (PCB Mount) *  
Junction-to-Ambient  
50  
°C/W  
110  
*
When mounted on 1" square PCB (FR-4 or G-10 Material) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
Notes  through are on page 9  
www.irf.com  
1
12/13/04  

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