IRFU3418

更新时间： 2024-11-23 22:32:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
10页	545K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFU3418 数据手册

PD - 94452

IRFR3418

IRFU3418

HEXFET^®Power MOSFET

Applications

l High frequency DC-DC converters

V_DSSR_DS(on)Max

I_D

14m

80V

30A

Benefits

l Low Gate-to-Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design, (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D-Pak

IRFR3418

I-Pak

IRFU3418

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

V_GS

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

280

140

3.8

@T = 25°C

Maximum Power Dissipation

@T = 25°C

Linear Derating Factor

0.95

W/°C

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

5.2

V/ns

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB Mount) *

Junction-to-Ambient

°C/W

110

Notes through are on page 10

www.irf.com

09/12/02

12 3 4 5 6 7...10

中文翻译

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