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IRFS7730PBF_15 PDF预览

IRFS7730PBF_15

更新时间: 2024-02-01 10:30:16
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 654K
描述
Brushed motor drive applications

IRFS7730PBF_15 数据手册

 浏览型号IRFS7730PBF_15的Datasheet PDF文件第2页浏览型号IRFS7730PBF_15的Datasheet PDF文件第3页浏览型号IRFS7730PBF_15的Datasheet PDF文件第4页浏览型号IRFS7730PBF_15的Datasheet PDF文件第5页浏览型号IRFS7730PBF_15的Datasheet PDF文件第6页浏览型号IRFS7730PBF_15的Datasheet PDF文件第7页 
StrongIRFET™  
IRFB7730PbF  
IRFS7730PbF  
IRFSL7730PbF  
HEXFET® Power MOSFET  
Application  
Brushed motor drive applications  
BLDC motor drive applications  
Battery powered circuits  
Half-bridge and full-bridge topologies  
Synchronous rectifier applications  
Resonant mode power supplies  
OR-ing and redundant power switches  
DC/DC and AC/DC converters  
DC/AC inverters  
VDSS  
75V  
RDS(on) typ.  
max  
2.2m  
2.6m  
246A  
ID (Silicon Limited)  
ID (Package Limited)  
195A  
D
D
S
Benefits  
S
S
D
G
Improved gate, avalanche and dynamic dV/dt ruggedness  
Fully characterized capacitance and avalanche SOA  
Enhanced body diode dV/dt and dI/dt capability  
Lead-free, RoHS compliant  
D
G
G
G
D
S
Gate  
Drain  
Source  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
50  
IRFB7730PbF  
IRFSL7730PbF  
IRFS7730PbF  
TO-220  
TO-262  
D2-Pak  
Tube  
IRFB7730PbF  
IRFSL7730PbF  
IRFS7730PbF  
Tube  
50  
Tube  
50  
Tape and Reel Left  
800  
IRFS7730TRLPbF  
8
6
4
2
0
250  
200  
150  
100  
50  
I
= 100A  
D
Limited by package  
T
= 125°C  
J
T
= 25°C  
J
0
4
6
8
10 12 14 16 18 20  
25  
50  
75  
100  
125  
150  
175  
T
, Case Temperature (°C)  
C
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
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© 2014 International Rectifier  
Submit Datasheet Feedback  
November 7, 2014  

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Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal