IRFR1N60APBF

更新时间： 2024-11-25 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	156K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFR1N60APBF 数据手册

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A

Vishay Siliconix

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

_DS(on)(Max.) (Ω)

Q_g(Max.) (nC)

600

Available

V_GS= 10 V

7.0

RoHS*

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

2.7

COMPLIANT

_gs(nC)

_gd(nC)

8.1

• Fully Characterized Capacitance and Avalanche Voltage

and Current

Configuration

Single

• Lead (Pb)-free Available

APPLICATIONS

DPAK

IPAK

(TO-252)

(TO-251)

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• Power Factor Correction

TYPICAL SMPS TOPOLOGIES

• Low Power Single Transistor Flyback

N-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR1N60APbF

SiHFR1N60A-E3

IRFR1N60A

DPAK (TO-252)

IRFR1N60ATRLPbF^a

SiHFR1N60ATL-E3^a

DPAK (TO-252)

IRFR1N60ATRPbF^a

SiHFR1N60AT-E3^a

IRFR1N60ATR^a

SiHFR1N60AT^a

DPAK (TO-252)

IRFR1N60ATRRPbF^aIRFU1N60APbF

SiHFR1N60ATR-E3^a

IPAK (TO-251)

Lead (Pb)-free

SiHFU1N60A-E3

IRFU1N60A

SnPb

SiHFR1N60A

SiHFU1N60A

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

1.4

Continuous Drain Current

V_GSat 10 V

I_D

0.89

5.6

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.28

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

1.4

E_AR

3.6

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

3.8

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 95 mH, R_G= 25 Ω, I_AS= 1.4 A (see fig. 12).

c. I_SD≤ 1.4 A, dI/dt ≤ 180 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91267

S-81367-Rev. A, 21-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRFR1N60APBF相关器件

型号	品牌	获取价格	描述	数据表
IRFR1N60ATR	VISHAY	获取价格	Power MOSFET
IRFR1N60ATRL	INFINEON	获取价格	暂无描述
IRFR1N60ATRLPBF	VISHAY	获取价格	Power MOSFET
IRFR1N60ATRPBF	VISHAY	获取价格	Power MOSFET
IRFR1N60ATRR	VISHAY	获取价格	Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal
IRFR1N60ATRRPBF	VISHAY	获取价格	Power MOSFET
IRFR210	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)
IRFR210	VISHAY	获取价格	Power MOSFET
IRFR210	KERSEMI	获取价格	Power MOSFET
IRFR210, IRFU210, SiHFR210, SiHFU210	VISHAY	获取价格	Power MOSFET