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IRFI830GPBF

更新时间： 2024-01-23 21:10:53
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 1570K
描述
Power MOSFET

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中文翻译

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IRFI830GPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliant风险等级：5.3
雪崩能效等级（Eas）：180 mJ外壳连接：ISOLATED
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (ID)：3.1 A最大漏源导通电阻：1.5 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：12 A认证状态：Not Qualified
表面贴装：NO端子面层：MATTE TIN OVER NICKEL
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON

IRFI830GPBF 数据手册

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IRFI830G, SiHFI830G  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Isolated Package  
PRODUCT SUMMARY  
VDS (V)  
500  
Available  
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;  
f = 60 Hz)  
RDS(on) (Ω)  
VGS = 10 V  
1.5  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
38  
5.0  
• Sink to Lead Creepage Distance = 4.8 mm  
• Dynamic dV/dt Rating  
Q
Q
gs (nC)  
gd (nC)  
• Low Thermal Resistance  
22  
• Lead (Pb)-free Available  
Configuration  
Single  
D
DESCRIPTION  
TO-220 FULLPAK  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The TO-220 FULLPAK eliminates the need for additional  
insulating hardware in commercial-industrial applications.  
The molding compound used provides a high isolation  
capability and a low thermal resistance between the tab and  
external heatsink. This isolation is equivalent to using a 100  
micron mica barrier with standard TO-220 product. The  
FULLPAK is mounted to a heatsink using a single clip or by  
a single screw fixing.  
G
S
N-Channel MOSFET  
S
D
G
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
IRFI830GPbF  
SiHFI830G-E3  
IRFI830G  
Lead (Pb)-free  
SnPb  
SiHFI830G  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
500  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
3.1  
Continuous Drain Current  
VGS at 10 V  
ID  
A
TC =100°C  
2.0  
Pulsed Drain Currenta  
IDM  
12  
Linear Derating Factor  
0.28  
180  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
3.1  
EAR  
3.5  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
35  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
3.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
10  
°C  
for 10 s  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 33 mH, RG = 25 Ω, IAS = 3.1 A (see fig. 12).  
c. ISD ≤ 3.1 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91159  
S-Pending-Rev. A, 23-Jun-08  
www.vishay.com  
1
WORK-IN-PROGRESS  
12345678

中文翻译

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IRFI840-005PBF INFINEON

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 		Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me
IRFI840-006 INFINEON

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 		Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me
IRFI840-006PBF INFINEON

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 		Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me

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