IRFI840G

更新时间： 2024-09-17 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	2815K
描述
Power MOSFET

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中文翻译

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数据手册
替代型号

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IRFI840G 数据手册

IRFI840G, SiHFI840G

Vishay Siliconix

Power MOSFET

FEATURES

• Isolated Package

PRODUCT SUMMARY

V_DS(V)

500

Available

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s,

f = 60 Hz)

R_DS(on)(Ω)

V_GS= 10 V

0.85

RoHS*

COMPLIANT

Q_g(Max.) (nC)

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

_gs(nC)

_gd(nC)

• Low Thermal Resistance

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

TO-220 FULLPAK

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. The isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI840GPbF

SiHFI840G-E3

IRFI840G

Lead (Pb)-free

SnPb

SiHFI840G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

4.6

Continuous Drain Current

V_GSat 10 V

I_D

2.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.32

370

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

4.6

E_AR

4.0

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

3.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 31 mH, R_G= 25 Ω, I_AS= 4.6 A (see fig. 12).

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91161

S-Pending-Rev. A, 23-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRFI840G 替代型号

型号	品牌	替代类型	描述	数据表
IRFI840GLCPBF	VISHAY	类似代替	Power MOSFET
IRFI840GPBF	VISHAY	类似代替	Power MOSFET
IRFI840GLC	VISHAY	类似代替	Power MOSFET

与IRFI840G相关器件

型号	品牌	获取价格	描述	数据表
IRFI840GLC	INFINEON	获取价格	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.5A)
IRFI840GLC	VISHAY	获取价格	Power MOSFET
IRFI840GLCPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFI840GLCPBF	VISHAY	获取价格	Power MOSFET
IRFI840GPBF	VISHAY	获取价格	Power MOSFET
IRFI840GPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFI9520G	INFINEON	获取价格	HEXFET POWER MOSFET
IRFI9520G	VISHAY	获取价格	Power MOSFET
IRFI9520G-003	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFI9520G-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met

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