是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.03 |
雪崩能效等级(Eas): | 370 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 4.6 A | 最大漏极电流 (ID): | 4.6 A |
最大漏源导通电阻: | 0.85 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | MATTE TIN OVER NICKEL |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFI840GLCPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRFI840GLCPBF | VISHAY |
获取价格 |
Power MOSFET | |
IRFI840GPBF | VISHAY |
获取价格 |
Power MOSFET | |
IRFI840GPBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET | |
IRFI9520G | INFINEON |
获取价格 |
HEXFET POWER MOSFET | |
IRFI9520G | VISHAY |
获取价格 |
Power MOSFET | |
IRFI9520G-003 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRFI9520G-003PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRFI9520G-004PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRFI9520G-005 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met |