IRFI840GPBF

更新时间： 2024-09-25 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	2815K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFI840GPBF 数据手册

IRFI840G, SiHFI840G

Vishay Siliconix

Power MOSFET

FEATURES

• Isolated Package

PRODUCT SUMMARY

V_DS(V)

500

Available

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s,

f = 60 Hz)

R_DS(on)(Ω)

V_GS= 10 V

0.85

RoHS*

COMPLIANT

Q_g(Max.) (nC)

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

_gs(nC)

_gd(nC)

• Low Thermal Resistance

Configuration

Single

• Lead (Pb)-free Available

DESCRIPTION

TO-220 FULLPAK

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. The isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI840GPbF

SiHFI840G-E3

IRFI840G

Lead (Pb)-free

SnPb

SiHFI840G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

4.6

Continuous Drain Current

V_GSat 10 V

I_D

2.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.32

370

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

4.6

E_AR

4.0

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

3.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 31 mH, R_G= 25 Ω, I_AS= 4.6 A (see fig. 12).

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91161

S-Pending-Rev. A, 23-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRFI840GPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFI9520G	INFINEON	获取价格	HEXFET POWER MOSFET
IRFI9520G	VISHAY	获取价格	Power MOSFET
IRFI9520G-003	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFI9520G-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFI9520G-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFI9520G-005	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFI9520G-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFI9520G-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFI9520G-009	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met
IRFI9520G-010	INFINEON	获取价格	Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met

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