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IRFI840-005 PDF预览

IRFI840-005

更新时间: 2024-12-02 05:25:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 66K
描述
Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFI840-005 数据手册

  

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Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me
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Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me
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Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me
IRFI840-011 INFINEON

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Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me
IRFI840-012 INFINEON

获取价格

Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me
IRFI840-012PBF INFINEON

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Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me