是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.58 |
其他特性: | HIGH RELIABILITY | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 4.6 A | 最大漏源导通电阻: | 0.85 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 250 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN OVER NICKEL | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFI840-009PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI840-010PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI840-011 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI840-011PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI840-012 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI840-012PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI840-013PBF | INFINEON |
获取价格 |
4.6A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRFI840A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRFI840B | FAIRCHILD |
获取价格 |
500V N-Channel MOSFET | |
IRFI840G | INFINEON |
获取价格 |
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A) |