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IRFF330 PDF预览

IRFF330

更新时间: 2024-11-17 22:31:23
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
7页 329K
描述
3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

IRFF330 数据手册

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IRFF330  
Data Sheet  
March 1999  
File Number 1893.3  
3.5A, 400V, 1.000 Ohm, N-Channel  
Power MOSFET  
Features  
• 3.5A, 400V  
• r = 1.000Ω  
This N-Channel enhancement mode silicon gate power field  
effect transistor is an advanced power MOSFET designed,  
tested, and guaranteed to withstand a specified level of  
energy in the breakdown avalanche mode of operation. All of  
these power MOSFETs are designed for applications such  
as switching regulators, switching convertors, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA17414.  
Ordering Information  
Symbol  
D
PART NUMBER  
PACKAGE  
BRAND  
IRFF330  
IRFF330  
TO-205AF  
NOTE: When ordering, include the entire part number.  
G
S
Packaging  
JEDEC TO-205AF  
SOURCE  
DRAIN  
(CASE)  
GATE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1

IRFF330 替代型号

型号 品牌 替代类型 描述 数据表
IRFF330 INFINEON

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