5秒后页面跳转
IRFD214 PDF预览

IRFD214

更新时间: 2024-01-30 11:33:01
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 401K
描述
Power MOSFET

IRFD214 数据手册

 浏览型号IRFD214的Datasheet PDF文件第2页浏览型号IRFD214的Datasheet PDF文件第3页浏览型号IRFD214的Datasheet PDF文件第4页浏览型号IRFD214的Datasheet PDF文件第5页浏览型号IRFD214的Datasheet PDF文件第6页浏览型号IRFD214的Datasheet PDF文件第7页 
IRFD214, SiHFD214  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
250  
• Repetitive Avalanche Rated  
• For Automatic Insertion  
• End Stackable  
Available  
RDS(on) (Ω)  
VGS = 10 V  
2.0  
RoHS*  
Qg (Max.) (nC)  
8.2  
1.8  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Fast Switching  
4.5  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
D
HEXDIP  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
S
G
The 4 pin DIP package is a low cost machine-insertable case  
style which can be stacked in multiple combinations on  
standard 0.1" pin centers. The dual drain servers as a  
thermal link to the mounting surface for power dissipation  
levels up to 1 W.  
D
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
HEXDIP  
IRFD214PbF  
SiHFD214-E3  
IRFD214  
Lead (Pb)-free  
SnPb  
SiHFD214  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
250  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
0.45  
Continuous Drain Current  
VGS at 10 V  
ID  
TC =100°C  
0.29  
A
Pulsed Drain Currenta  
IDM  
3.6  
Linear Derating Factor  
0.0083  
57  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Avalanche Currenta  
EAS  
IAR  
0.45  
Repetitive Avalanche Energya  
EAR  
0.10  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
1.0  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.8  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 28 mH, RG = 25 Ω, IAS = 1.8 A (see fig. 12).  
c. ISD 2.7 A, dI/dt 65 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91130  
S-Pending-Rev. A, 29-May-08  
www.vishay.com  
1
WORK-IN-PROGRESS  

与IRFD214相关器件

型号 品牌 获取价格 描述 数据表
IRFD214PBF VISHAY

获取价格

Power MOSFET
IRFD214PBF INFINEON

获取价格

HEXFET Power MOSFET
IRFD220 FAIRCHILD

获取价格

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
IRFD220 MOTOROLA

获取价格

Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Meta
IRFD220 VISHAY

获取价格

Power MOSFET
IRFD220 INTERSIL

获取价格

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET
IRFD220 INFINEON

获取价格

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=0.80A)
IRFD220PBF VISHAY

获取价格

Power MOSFET
IRFD220PBF INFINEON

获取价格

HEXFET㈢ Power MOSFET
IRFD220R ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 800MA I(D) | TO-250VAR